SiC er vist bedre end GaN ved høje °C?
SiC transistor der kan tåle 325°C og 1200V/220mOhm:
Oct 28, 2011, SiC “Super” Junction Transistors Deliver High Temp Performance:
http://powerelectronics.com/power_semicond...
Citat: "...The leakage current in the SJT at VDS = 1200 V is below 5 µA up to temperatures as high as 225 °C. Leakage currents of < 100 µA were measured even at 325..."
Project works on silicon carbide ICs for high temperatures:
http://ing.dk/grupper/elektronik/links/Pro...
Citat: "...
Scientists at Raytheon’s Glenrothes facility are working on a project to demonstrate integrated circuits made from silicon carbide that operate at temperatures above 300°C.
..."




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